FDB031N08 datasheet(2/8 Pages) FAIRCHILD

部品番号	FDB031N08

部品情報	N-Channel PowerTrench짰 MOSFET 75V, 235A, 3.1m廓

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メーカー	FAIRCHILD [Fairchild Semiconductor]

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2 / 8 page

FDB031N08 Rev. A3

www.fairchildsemi.com

2

Package Marking and Ordering Information T

C = 25

oC unless otherwise noted

Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDB031N08

D2-PAK

330mm

24mm

800

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 250µA, VGS = 0V, TC = 25

oC75

-

V

∆BV

DSS

∆T

J

Breakdown Voltage Temperature

Coefficient

ID = 250µA, Referenced to 25

oC

-

0.05

-

V/oC

IDSS

Zero Gate Voltage Drain Current

VDS = 75V, VGS = 0V

-

1

µA

VDS = 75V, TC = 150

oC

-

500

IGSS

Gate to Body Leakage Current

VGS = ±20V, VDS = 0V

-

±100

nA

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 250µA2.5

3.5

4.5

V

RDS(on)

Static Drain to Source On Resistance

VGS = 10V, ID = 75A

-

2.4

3.1

m

Ω

gFS

Forward Transconductance

VDS = 10V, ID = 75A

(Note 4)

-

180

-

S

Ciss

Input Capacitance

VDS = 25V, VGS = 0V

f = 1MHz

-

11400

15160

pF

Coss

Output Capacitance

-

1360

1810

pF

Crss

Reverse Transfer Capacitance

-

595

800

pF

Qg(tot)

Total Gate Charge at 10V

VDS = 60V, ID = 75A

VGS = 10V

(Note 4, 5)

-

169

220

nC

Qgs

Gate to Source Gate Charge

-

60

-

nC

Qgd

Gate to Drain “Miller” Charge

-

47

-

nC

td(on)

Turn-On Delay Time

VDD = 37.5V, ID = 75A

RGEN = 25Ω, VGS = 10V

(Note 4, 5)

-

230

470

ns

tr

Turn-On Rise Time

-

191

392

ns

td(off)

Turn-Off Delay Time

-

335

680

ns

tf

Turn-Off Fall Time

-

121

252

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

235

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

940

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 75A

-

1.3

V

trr

Reverse Recovery Time

VGS = 0V, ISD = 75A

dIF/dt = 100A/µs

(Note 4)

-53

-

ns

Qrr

Reverse Recovery Charge

-

77

-

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.71mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width

≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

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