FDD8880_08 datasheet(3/11 Pages) FAIRCHILD

部品番号	FDD8880

部品情報	N-Channel PowerTrench짰 MOSFET 30V, 58A, 9m廓

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8 Fairchild Semiconductor Corporation

FDD8880 Rev. B

3

Typical Characteristics T

C = 25°C unless otherwise noted

Figure 1. Normalized Power Dissipation vs Case

Temperature

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

Figure 3. Normalized Maximum Transient Thermal Impedance

Figure 4. Peak Current Capability

TC, CASE TEMPERATURE (

oC)

0

25

50

75

100

175

0.2

0.4

0.6

0.8

1.0

1.2

125

150

0

10

20

30

40

50

60

25

50

75

100

125

150

175

TC, CASE TEMPERATURE (

oC)

CURRENT LIMITED

BY PACKAGE

VGS = 4.5V

VGS = 10V

0.1

1

10-5

10-4

10-3

10-2

10-1

100

101

0.01

2

t, RECTANGULAR PULSE DURATION (s)

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

PDM

t1

t2

0.5

0.2

0.1

0.05

0.01

0.02

DUTY CYCLE - DESCENDING ORDER

SINGLE PULSE

100

30

500

t, PULSE WIDTH (s)

10-5

10-4

10-3

10-2

10-1

100

101

TC = 25

oC

I = I25

175 - TC

150

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

VGS = 4.5V

VGS = 10V

同様の部品番号 - FDD8880_08

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	FDD8880	127Kb / 11P	N-Channel PowerTrench MOSFET
VBsemi Electronics Co.,...	FDD8880	1,019Kb / 8P	N-Channel 30-V (D-S) MOSFET
Inchange Semiconductor ...	FDD8880	353Kb / 2P	isc N-Channel MOSFET Transistor
Guangdong Youtai Semico...	FDD8880	436Kb / 8P	30V N -Channel MOSFET

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