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FDS6676AS データシート(PDF) 4 Page - Fairchild Semiconductor |
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FDS6676AS データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDS6676AS Rev B2 Typical Characteristics 0 10 20 30 40 50 00.25 0.5 0.75 1 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5V 3.5V VGS = 10V 4.5V 3.0V 6.0V 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 10203040 50 ID, DRAIN CURRENT (A) VGS = 3.0V 4.5V 3.5V 4.0V 10V 6.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 -55 -35 -15 5 25 45 65 85 105 125 TJ, JUNCTION TEMPERATURE ( oC) ID = 14.5A VGS =10V 0.004 0.006 0.008 0.01 0.012 0.014 0.016 2468 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 7.3 A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 10 20 30 40 50 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) TA = 125 oC 25 oC -55 oC VDS = 5V 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
同様の部品番号 - FDS6676AS_08 |
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同様の説明 - FDS6676AS_08 |
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