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FOD4116SDV データシート(PDF) 2 Page - Fairchild Semiconductor |
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FOD4116SDV データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page ©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.1.4 2 Absolute Maximum Ratings (T A = 25°C unless otherwise noted) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Note: 1. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, Pins 1, 2 and 3 are common, and Pins 4, 5 and 6 are common. Symbol Parameters Device Value Units TOTAL DEVICE TSTG Storage Temperature All -55 to +150 °C TOPR Operating Temperature All -55 to +100 °C TSOL Lead Solder Temperature (Wave) All 260 for 10 sec °C TJ Junction Temperature Range All 125 °C VISO Isolation Test Voltage(1) (rms AC voltage, 60Hz, 1 min. duration) All 5000 Vac(rms) PD Total Device Power Dissipation @ 25°C Derate above 25°C All 500 mW 8.3 mW/°C EMITTER IF Continuous Forward Current All 30 mA VR Reverse Voltage All 6 V PD Total Power Dissipation 25°C Ambient Derate above 25°C All 50 mW 5.4 mW/°C DETECTOR VDRM Off-State Output Terminal Voltage FOD410, FOD4116 600 V FOD4108, FOD4118 800 ITSM Peak Non-Repetitive Surge Current (single cycle 60Hz sine wave) All 3 A ITM Peak On-State Current All 300 mA PD Total Power Dissipation @ 25°C Ambient Derate above 25°C All 450 mW 6.25 mW/°C |
同様の部品番号 - FOD4116SDV |
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同様の説明 - FOD4116SDV |
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