データシートサーチシステム |
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FQD3N50C データシート(PDF) 2 Page - Fairchild Semiconductor |
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FQD3N50C データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page 2 www.fairchildsemi.com FQD3N50C / FQU3N50C Rev. B Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 58mH, IAS =2.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2.5A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Device Marking Device Package Reel Size Tape Width Quantity FQD3N50C FQD3N50CTM D-PAK 380mm 16mm 2500 FQD3N50C FQD3N50CTF D-PAK 380mm 16mm 2500 FQU3N50C FQU3N50CTU I-PAK - - 70 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V ∆BV DSS/ ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA VDS = 400 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.25 A -- 2.1 2.5 Ω gFS Forward Transconductance VDS = 40 V, ID = 1.25 A (Note 4) -- 1.5 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 280 365 pF Coss Output Capacitance -- 50 65 pF Crss Reverse Transfer Capacitance -- 8.5 11 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 250 V, ID = 2.5A, RG = 25 Ω (Note 4, 5) -- 10 30 ns tr Turn-On Rise Time -- 25 60 ns td(off) Turn-Off Delay Time -- 35 80 ns tf Turn-Off Fall Time -- 25 60 ns Qg Total Gate Charge VDS = 400 V, ID = 2.5A, VGS = 10 V (Note 4, 5) -- 10 13 nC Qgs Gate-Source Charge -- 1.5 -- nC Qgd Gate-Drain Charge -- 5.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 10 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 3 A, dIF / dt = 100 A/µs (Note 4) -- 170 -- ns Qrr Reverse Recovery Charge -- 0.7 -- µC |
同様の部品番号 - FQD3N50C_07 |
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同様の説明 - FQD3N50C_07 |
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