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データシートサーチシステム |
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データシートサーチシステム |
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FDS5682 データシート(PDF) 3 Page - Fairchild Semiconductor |
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FDS5682 データシート(HTML) 3 Page - Fairchild Semiconductor |
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3 / 12 page  FDS5682 Rev. A1 www.fairchildsemi.com 3 Switching Characteristics (VGS = 10V) tON Turn-On Time VDD = 30V, ID = 7.5A VGS = 10V, RGS = 11Ω - - 33 ns td(ON) Turn-On Delay Time - 9 - ns tr Rise Time - 13 - ns td(OFF) Turn-Off Delay Time - 67 - ns tf Fall Time - 17 - ns tOFF Turn-Off Time - - 126 ns Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 7.5A - - 1.25 V ISD = 2.1A - - 1.0 V trr Reverse Recovery Time ISD = 7.5A, dISD/dt=100A/µs - - 33 ns QRR Reverse Recovered Charge ISD = 7.5A, dISD/dt=100A/µs - - 29 nC Notes: 1: Starting TJ = 25°C, L = 1mH, IAS = 13.7A, VDD = 60V, VGS = 10V. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 3: RθJA is measured with 1.0 in 2 copper on FR-4 board. |
同様の部品番号 - FDS5682_08 |
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同様の説明 - FDS5682_08 |
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