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STF13NM50N データシート(PDF) 4 Page - STMicroelectronics |
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STF13NM50N データシート(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N 4/18 2 Electrical characteristics (TCASE= 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS= 0 500 V dv/dt(1) 1. Characteristics value at turn off on inductive load Drain-source voltage slope VDD=400 V, ID=12 A, VGS=10 V 30 V/ns IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc=125°C 1 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 23 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 6 A 0.25 0.32 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS =15 V, ID= 6 A 8S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =50 V, f=1 MHz, VGS=0 960 50 5 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS=0, VDS =0 to 480 V 110 pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 test signal level=20 mV open drain 5 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=400 V, ID = 12 A VGS =10 V (see Figure 19) 30 5 15 nC nC nC |
同様の部品番号 - STF13NM50N |
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