データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

STP19NM65N データシート(PDF) 5 Page - STMicroelectronics

部品番号 STP19NM65N
部品情報  N-channel 650 V - 0.25 廓 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh??Power MOSFET
Download  19 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP19NM65N データシート(HTML) 5 Page - STMicroelectronics

  STP19NM65N Datasheet HTML 1Page - STMicroelectronics STP19NM65N Datasheet HTML 2Page - STMicroelectronics STP19NM65N Datasheet HTML 3Page - STMicroelectronics STP19NM65N Datasheet HTML 4Page - STMicroelectronics STP19NM65N Datasheet HTML 5Page - STMicroelectronics STP19NM65N Datasheet HTML 6Page - STMicroelectronics STP19NM65N Datasheet HTML 7Page - STMicroelectronics STP19NM65N Datasheet HTML 8Page - STMicroelectronics STP19NM65N Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 19 page
background image
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
Electrical characteristics
5/19
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
650
V
dv/dt (1)
1.
Characteristics value at turn off on inductive load
Drain source voltage slope
VDD= 520 V, ID=15.5 A,
VGS=10 V
30
V/ns
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, @125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 7.75 A
0.25
0.27
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
VDS=15 V, ID =7.75 A
15
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
1900
110
10
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0 ,
VDS = 0 to 520 V
230
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 15.5 A,
VGS = 10 V,
(see Figure 19)
55
9
30
nC
nC
nC


同様の部品番号 - STP19NM65N

メーカー部品番号データシート部品情報
logo
STMicroelectronics
STP19NM50N STMICROELECTRONICS-STP19NM50N Datasheet
715Kb / 15P
   N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247
logo
Inchange Semiconductor ...
STP19NM50N ISC-STP19NM50N Datasheet
302Kb / 2P
   isc N-Channel Mosfet Transistor
More results

同様の説明 - STP19NM65N

メーカー部品番号データシート部品情報
logo
STMicroelectronics
STF15NM65N STMICROELECTRONICS-STF15NM65N Datasheet
499Kb / 18P
   N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET
STP21NM50N STMICROELECTRONICS-STP21NM50N_07 Datasheet
463Kb / 18P
   N-channel 500V - 0.15廓 - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh??Power MOSFET
STB12NM60N STMICROELECTRONICS-STB12NM60N Datasheet
591Kb / 18P
   N-channel 600V - 0.35廓 - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET
STB15NM60N STMICROELECTRONICS-STB15NM60N Datasheet
607Kb / 18P
   N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET
STB20NM60-1 STMICROELECTRONICS-STB20NM60-1 Datasheet
440Kb / 18P
   N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET
STB21NM50N STMICROELECTRONICS-STB21NM50N Datasheet
633Kb / 16P
   N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
STP21NM60N STMICROELECTRONICS-STP21NM60N Datasheet
672Kb / 16P
   N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
STB23NM60N STMICROELECTRONICS-STB23NM60N Datasheet
554Kb / 19P
   N-channel 600 V - 0.150 廓 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh??Power MOSFET
STW24NM65N STMICROELECTRONICS-STW24NM65N Datasheet
552Kb / 19P
   N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET
STP21NM60N STMICROELECTRONICS-STP21NM60N_08 Datasheet
562Kb / 18P
   N-channel 600 V - 0.17 廓 - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh??Power MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19


データシート ダウンロード

Go To PDF Page


リンク URL




プライバシーポリシー
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com