データシートサーチシステム |
|
2SA1190DTZ-E データシート(PDF) 2 Page - Renesas Technology Corp |
|
2SA1190DTZ-E データシート(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SA1190 Rev.2.00 Aug 10, 2005 page 2 of 6 Electrical Characteristics (Ta = 25°C) 2SA1190 Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –90 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –90 — — V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO — — –0.1 µA VCB = –70 V, IE = 0 Emitter cutoff current IEBO — — –0.1 µA VEB = –2 V, IC = 0 DC current trnsfer ratio hFE* 1 250 — 800 VCE = –12 V, IC = –2 mA* 2 Collector to emitter saturation voltage VCE(sat) — –0.05 –0.15 V IC = –10 mA, IB = –1 mA* 2 Base to emitter saturation voltage VBE(sat) — –0.7 –1.0 V Gain bandwidth product fT — 130 — MHz VCE = –6 V, IC = –10 mA Collector output capacitance Cob — 3.2 — pF VCB = –10 V, IE = 0, f = 1 MHz Noise figure NF — 0.15 1.5 dB VCE = –6 V, IC = –0.1 mA, Rg = 10 k Ω f = 1 kHz — 0.2 2.0 dB VCE = –6 V, IC = –0.1 mA, Rg = 10 k Ω f = 10 Hz Noise voltage referred to input en — 0.7 — nV/ √Hz VCB = –6 V, IC = –10 mA, Rg = 0, f = 1 kHz Notes: 1. The 2SA1190 and 2SA1191 are grouped by hFE as follows. 2. Pulse test D E 250 to 500 400 to 800 |
同様の部品番号 - 2SA1190DTZ-E |
|
同様の説明 - 2SA1190DTZ-E |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |