STF20NM50FD datasheet(3/16 Pages) STMICROELECTRONICS

部品番号	STF20NM50FD

部品情報	N-channel 500 V, 0.22 廓, 20 A D2PAK, TO-220FP, TO-220 FDmesh??Power MOSFET

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3 / 16 page

STB20NM50FD - STF20NM50FD - STP20NM50FD

Electrical ratings

3/16

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

D²PAK

TO-220

TO-220FP

VDS

Drain-source voltage (VGS=0)

500

V

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

20

20 (1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at TC = 100 °C

14

14(1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

80

80(1)

A

PTOT

Total dissipation at TC = 25 °C

192

45

W

dv/dt (3)

3.

ISD ≤ 20 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

20

V/ns

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink

(t=1 s;TC=25 °C)

--

2500

V

Tstg

Storage temperature

-65 to 150

°C

Tj

Operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

TO-220

D²PAK

TO-220FP

Unit

Rthj-case

Thermal resistance junction-case max

0.65

2.8

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

--

62.5

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

--

30

--

°C/W

Tl

Maximum lead temperature for

soldering purposes

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

10

A

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAS, VDD = 35 V)

700

mJ

同様の部品番号 - STF20NM50FD

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