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STB22NS25Z データシート(PDF) 5 Page - STMicroelectronics |
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STB22NS25Z データシート(HTML) 5 Page - STMicroelectronics |
5 / 14 page STB22NS25Z - STP22NS25Z Electrical characteristics 5/14 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr Turn-on delay time Rise time VDD = 125V, ID = 11A RG =4.7Ω VGS = 10V (see Figure 12) 20 30 ns ns td(Voff) tf Turn-off- delay time Fall time VDD = 125V, ID = 11 A, RG =4.7Ω, VGS = 10V (see Figure 12) 100 78 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time Vclamp = 200V, ID = 22 A, RG =4.7Ω, VGS = 10V (see Figure 12) 37 65 110 ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 22 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) 88 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 22 A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A, di/dt = 100A/µs VDD = 50V, Tj = 150°C (see Figure 17) 292 3065 21 ns nC A Table 8. Gate-source zener diode Symbol Parameter Test conditions Min Typ Max Unit BVGSO (1) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components Gate-source breakdown voltage Igs=± 500µA (open drain) 20 V |
同様の部品番号 - STB22NS25Z |
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同様の説明 - STB22NS25Z |
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