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STP22NS25Z データシート(PDF) 4 Page - STMicroelectronics |
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STP22NS25Z データシート(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STB22NS25Z - STP22NS25Z 4/14 2 Electrical characteristics (Tcase =25°C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS = 0 250 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125°C 10 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ±18V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 3 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 11A 0.13 0.15 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward transconductance VDS > ID(on) x RDS(on)max, ID =11A 22 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 2400 340 120 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 200V, ID = 20A, VGS = 10V (see Figure 13) 108 11 40 151 nC nC nC |
同様の部品番号 - STP22NS25Z |
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同様の説明 - STP22NS25Z |
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