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2SJ550 データシート(PDF) 4 Page - Renesas Technology Corp |
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2SJ550 データシート(HTML) 4 Page - Renesas Technology Corp |
4 / 9 page 2SJ550(L), 2SJ550(S) Rev.3.00 Sep 07, 2005 page 4 of 8 0.40 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 0.08 0.16 0.24 0.32 Static Drain to Source on State Resistance vs. Temperature Pulse Test ID = –15 A ID = –15 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 100 30 3 10 0.3 1 0.1 –0.1 –0.3 –1 –3 –30 –10 –100 Tc = –25°C 75°C VDS = –10 V Pulse Test 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time –0.1 –0.2 –0.5 –1 –2 –5 –20 –10 500 100 200 20 50 5 10 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 10000 1000 3000 300 30 100 10 Ciss Coss Crss VGS = 0 f = 1 MHz 0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –100 –80 –60 –40 –20 Dynamic Input Characteristics 816 24 32 40 VDS VGS 1000 200 500 100 20 50 10 –0.2 –0.5 –1 –5 –2 –20 –10 –0.1 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VDD = –10 V –25 V –50 V VDD = –50 V –25 V –10 V –10 V VGS = –4 V –10 A –5 A –5 A, –10 A, –15 A VGS = –10 V, VDD = –30 V PW = 5 µs, duty ≤ 1 % |
同様の部品番号 - 2SJ550 |
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同様の説明 - 2SJ550 |
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