データシートサーチシステム |
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2SK1304-E データシート(PDF) 4 Page - Renesas Technology Corp |
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2SK1304-E データシート(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1304 Rev.2.00 Sep 07, 2005 page 4 of 6 0.10 40 160 Case Temperature TC (°C) 0.08 0.02 0 80 120 0 0.04 0.06 Static Drain to Source on State Resistance vs. Temperature 10 A Pulse Test ID = 50 A –40 VGS = 10 V VGS = 4 V 20 A 50 A 10 A 20 A 50 250 Drain Current ID (A) 20 2 1.0 20 5 10 Forward Transfer Admittance vs. Drain Current –25 °C VGS = 10 V Pulse Test 1.0 TC = 25°C 75 °C 10 5 0.5 500 5 Reverse Drain Current IDR (A) 200 20 1.0 10 50 5 50 100 Body to Drain Diode Reverse Recovery Time 0.5 10 20 di/dt = 50 A/ µs, Ta = 25°C VGS = 0 Pulse Test 2 Crss Coss 10,000 20 50 Drain to Source Voltage VDS (V) 100 10 30 40 10 1,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 0 Ciss 100 80 200 Gate Charge Qg (nc) Dynamic Input Characteristics 80 20 40 120 160 0 40 60 VDS 20 16 4 0 8 12 VDD = 25 V 50 V 80 V ID = 40 A VGS VDD = 80 V 50 V 25 V 250 Drain Current ID (A) 1,000 100 1.0 5 20 20 200 500 VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% 0.5 50 10 Switching Characteristics td (off) tr td (on) 10 tf • • |
同様の部品番号 - 2SK1304-E |
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同様の説明 - 2SK1304-E |
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