データシートサーチシステム |
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2SK1337 データシート(PDF) 4 Page - Renesas Technology Corp |
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2SK1337 データシート(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1337 Rev.2.00 Sep 07, 2005 page 4 of 6 10 40 160 Case Temperature TC (°C) 8 2 0 80 120 0 4 6 Static Drain to Source on State Resistance vs. Temperature –40 Pulse Test VGS = 10 V ID = 0.5 A 0.2 A 0.1 A 0.2 A 0.1 A 0.5 A VGS = 4 V 5 0.1 2 Drain Current ID (A) 1 0.1 0.05 0.2 1 0.02 0.5 0.2 0.05 0.5 Forward Transfer Admittance vs. Drain Current 2 VDS = 10 V Pulse Test 25 °C TC = –25°C 75 °C 500 0.1 2 Reverse Drain Current IDR (A) 200 10 0.05 0.2 1 0.02 50 100 5 0.5 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/ µs, Ta = 25°C VGS = 0 20 100 20 50 Drain to Source Voltage VDS (V) 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 10 VGS = 0 f = 1 MHz Crss Coss Ciss 1,000 1 200 1.6 4.0 Gate Charge Qg (nc) Dynamic Input Characteristics 160 40 0.8 2.4 3.2 0 80 120 20 16 4 0 8 12 0 50 V 80 V VDD = 25 V VGS VDS VDD = 80 V 50 V 25 V ID = 0.3 A 50 Drain Current ID (A) 20 0.5 5 10 0.02 1 Switching Characteristics td (off) 0.05 0.2 0.5 0.1 1 2 tf tr td (on) VGS = 10 V VDD = 30 V PW = 2 µs, duty < 0.1% 2 • • |
同様の部品番号 - 2SK1337 |
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同様の説明 - 2SK1337 |
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