データシートサーチシステム |
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2SK1947-E データシート(PDF) 4 Page - Renesas Technology Corp |
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2SK1947-E データシート(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1947 Rev.2.00 Sep 07, 2005 page 4 of 6 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 0.20 0.16 0.12 0.08 0.04 0 I = 50 A D –40 0 80 120 40 Pulse Test V = 10 V 160 GS 10 A, 20 A Tc = 25 °C 75 °C 100 50 20 10 5 2 1 –25 °C Pulse Test V = 10 V DS 0.5 1 2 5 10 20 50 500 1 2 5 10 20 50 100 di/dt = 100 A/ s V = 0, Ta = 25 °C GS µ 200 100 50 20 10 5 10000 1000 100 10 Ciss Coss Crss V = 0 f = 1 MHz GS 010 20 30 40 50 500 400 300 200 100 20 16 12 8 4 0 I = 50 A D V = 200 V 100 V 50 V DD 80 160 240 320 400 V = 200 V 100 V 50 V DD VDS 0 VGS t t 1000 500 200 100 50 20 10 0.5 1 2 5 10 20 50 f r VGS = 10 V, VDD = 30 V PW = 2 µs, duty ≤ 1 % td(off) td(on) |
同様の部品番号 - 2SK1947-E |
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同様の説明 - 2SK1947-E |
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