2SK2735L-E datasheet(5/8 Pages) RENESAS

部品番号	2SK2735L-E

部品情報	Silicon N Channel MOS FET High Speed Power Switching

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メーカー	RENESAS [Renesas Technology Corp]

ホームページ	http://www.renesas.com

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5 / 8 page

2SK2735(L), 2SK2735(S)

Rev.2.00 Sep 07, 2005 page 5 of 7

50

40

30

20

10

0

0.4

0.8

1.2

1.6

2.0

VGS = 0, –5 V

10 V

5 V

Source to Drain Voltage

VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Width

PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

Pulse Test

Vin Monitor

D.U.T.

Vin

10 V

RL

VDD

= 10 V

tr

td(on)

Vin

90%

10%

Vout

td(off)

Vout

Monitor

50

Ω

90%

10%

tf

Switching Time Test Circuit

Waveform

3

1

0.3

0.1

0.03

0.01

10

µ

100

µ

1 m

10 m

100 m

1

10

DM

P

PW

T

D =

PW

T

θch – c(t) = γs (t) • θch – c

θch – c = 6.25°C/W, Tc = 25°C

D = 1

0.5

0.2

0.01

0.02

0.1

0.05

1 shot

Pulse

Tc = 25

°C

同様の部品番号 - 2SK2735L-E

メーカー	部品番号	データシート	部品情報
Hitachi Semiconductor	2SK2735L	39Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
VBsemi Electronics Co.,...	2SK2735L	959Kb / 8P	N-Channel 30-V (D-S) MOSFET
Inchange Semiconductor ...	2SK2735L	398Kb / 2P	isc N-Channel MOSFET Transistor

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