データシートサーチシステム |
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2SK2329-E データシート(PDF) 4 Page - Renesas Technology Corp |
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2SK2329-E データシート(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK2393 Rev.2.00 Sep 07, 2005 page 4 of 6 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Reverse Drain Current IDR (A) Body to Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics Gate Charge Qg (nc) Drain Current ID (A) Switching Characteristics 5 4 3 2 1 –40 0 40 80 120 160 0 Pulse Test ID = 5 A 2 A VGS = 15 V 1 A 0.1 10 2 5 1 0.2 0.5 0.1 0.2 0.5 1 25 10 VDS = 20 V Pulse Test 25 °C Tc = –25 °C 75 °C 0.1 0.3 1 3 10 50 20 10 2 5 1 0.5 di/dt = 100 A/ µs VGS = 0, Ta = 25°C 010 20 30 40 50 10000 3000 1000 300 100 30 10 VGS = 0 f = 1 MHz Ciss Coss Crss 1000 800 600 400 200 0 20 16 12 8 4 0 40 80 120 160 200 VGS VDS VDD = 250 V 400 V 600 V VDD = 250 V 400 V 600 V ID = 8 A 0.1 2000 1000 200 500 100 20 50 0.2 0.5 1 2 5 10 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % tf tr td(on) td(off) |
同様の部品番号 - 2SK2329-E |
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同様の説明 - 2SK2329-E |
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