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2SK2800-E データシート(PDF) 2 Page - Renesas Technology Corp |
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2SK2800-E データシート(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page 2SK2800 Rev.9.00 Sep 07, 2005 page 2 of 7 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 40 A Drain peak current ID(pulse) Note1 160 A Body-drain diode reverse drain current IDR 40 A Avalanche current IAP Note 3 40 A Avalanche energy EAR Note 3 137 mJ Channel dissipation Pch Note 2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1 mA, VDS = 10V RDS(on) — 15 20 m Ω ID = 20 A, VGS = 10V Note4 Static drain to source on state resistance RDS(on) — 25 40 m Ω ID = 20 A, VGS = 4 V Note4 Forward transfer admittance |yfs| 20 35 — S ID = 20 A, VDS = 10 V Note4 Input capacitance Ciss — 1500 — pF Output capacitance Coss — 720 — pF Reverse transfer capacitance Crss — 200 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 20 — ns Rise time tr — 180 — ns Turn-off delay time td(off) — 200 — ns Fall time tf — 200 — ns ID = 20 A, RL = 1.5 Ω, VGS = 10 V Body–drain diode forward voltage VDF — 0.95 — V IF = 40 A, VGS = 0 Body–drain diode reverse recovery time trr — 70 — V IF = 40 A, VGS = 0 diF/ dt =50 A/ µs Note: 4. Pulse test |
同様の部品番号 - 2SK2800-E |
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同様の説明 - 2SK2800-E |
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