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STB25NM60ND データシート(PDF) 4 Page - STMicroelectronics |
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STB25NM60ND データシート(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STP/F25NM60ND - STB25NM60ND - STI25NM60ND - STW25NM60ND 4/18 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Value Unit Min. Typ. Max. V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 600 V dv/dt(1) 1. Characteristic value at turn off on inductive load Drain source voltage slope VDD= 480 V, ID= 21 A, VGS= 10 V 48 V/ns IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 10.5 A 0.13 0.16 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS = 15 V, ID = 10.5 A 17 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 2400 150 15 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0, VDS = 0 to 480 V 320 pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 10.5 A RG =4.7 Ω VGS = 10 V (see Figure 23), (see Figure 18) 60 30 50 40 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 21 A, VGS = 10 V, (see Figure 19) 80 40 15 nC nC nC Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level = 20 mV Open drain 1.6 Ω |
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