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データシートサーチシステム |
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データシートサーチシステム |
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2SK3155 データシート(PDF) 2 Page - Renesas Technology Corp |
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2SK3155 データシート(HTML) 2 Page - Renesas Technology Corp |
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2 / 8 page  2SK3155 Rev.5.00 Sep 07, 2005 page 2 of 7 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ±20 V Drain current ID 15 A Drain peak current ID(pulse) Note1 60 A Body-drain diode reverse drain current IDR 15 A Avalanche current IAP Note3 15 A Avalanche energy EAR Note3 16 mJ Channel dissipation Pch Note2 30 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 150 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 150 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V RDS(on) — 0.10 0.13 Ω ID = 8 A, VGS = 10 V Note4 Static drain to source on state resistance RDS(on) — 0.12 0.15 Ω ID = 8 A, VGS = 4 V Note4 Forward transfer admittance |yfs| 8.5 14 — S ID = 8 A, VDS = 10 V Note4 Input capacitance Ciss — 850 — pF Output capacitance Coss — 300 — pF Reverse transfer capacitance Crss — 160 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 13 — ns Rise time tr — 100 — ns Turn-off delay time td(off) — 195 — ns Fall time tf — 110 — ns ID = 8 A, VGS = 10 V, RL = 3.75 Ω Body–drain diode forward voltage VDF — 0.9 — V IF = 15 A, VGS = 0 Body–drain diode reverse recovery time trr — 140 — ns IF = 15 A, VGS = 0 diF/ dt = 50 A/ µs Note: 4. Pulse test |
同様の部品番号 - 2SK3155 |
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同様の説明 - 2SK3155 |
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