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2SK3210L データシート(PDF) 2 Page - Renesas Technology Corp |
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2SK3210L データシート(HTML) 2 Page - Renesas Technology Corp |
2 / 9 page 2SK3210(L), 2SK3210(S) Rev.3.00 Sep. 30, 2004 page 2 of 8 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 150 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS —— ±10 µAVGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS —— 10 µAVDS = 150 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA RDS(on) —40 45 m Ω ID = 15 A, VGS = 10 V Note4 Static drain to source on state resistance RDS(on) —45 63 m Ω ID = 15 A, VGS = 4 V Note4 Forward transfer admittance |yfs|18 30 — S ID = 15 A, VDS = 10 V Note4 Input capacitance Ciss — 2600 — pF Output capacitance Coss — 820 — pF Reverse transfer capacitance Crss — 350 — pF VDS = 10 V, VGS = 0 f = 1MHz Turn-on delay time td(on) —25— ns Rise time tr — 180 — ns Turn-off delay time td(off) — 600 — ns Fall time tf — 280 — ns VGS = 10 V, ID= 15 A RL = 2 Ω Body–drain diode forward voltage VDF —0.91— V IF = 30 A, VGS = 0 Body–drain diode reverse recovery time trr — 110 — ns IF = 30 A, VGS = 0 diF/dt = 50 A/ µs Notes: 4. Pulse test |
同様の部品番号 - 2SK3210L |
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同様の説明 - 2SK3210L |
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