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2SJ517YYTL-E データシート(PDF) 3 Page - Renesas Technology Corp

部品番号 2SJ517YYTL-E
部品情報  Silicon P Channel MOS FET
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ517YYTL-E データシート(HTML) 3 Page - Renesas Technology Corp

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2SJ517
Rev.4.00 Sep 07, 2005 page 3 of 6
Main Characteristics
2.0
0.5
0
1.0
1.5
0
50
100
150
200
Ambient Temperature
Ta (°C)
Power vs. Temperature Derating
Test Condition:
When using the aluminum ceramic
board (12.5
× 20 × 70 mm)
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
–0.1
–10
–1
–0.1
–0.01
–0.3
–1
–3
–10
–30
–100
–3
–0.3
–0.03
Operation in
this area is
limited by RDS (on)
Ta = 25°C
PW
= 10
ms
(1
shot)
–5
–4
–3
0
–1
–2
0
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
–3 V
Pulse Test
–2.5 V
–2
–4
–6
–8
–10
–5
0
–1
–2
–3
–4
0
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
–1
–2
–3
–4
–5
Tc = 75°C
–25°C
25°C
VDS = –10 V
Pulse Test
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2
–4
–6
–8
–10
Pulse Test
ID = –2 A
–0.5 A
–1 A
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.2
0.5
0.05
0.1
0.01
0.02
–10
–4 V
VGS = –2.5 V
Pulse Test
–0.1 –0.2
–0.5
–1
–2
–5
DC
Operation
1 ms
VGS = –1.5 V
–10 V
–2 V
–4 V


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