STU7NA80 datasheet(2/5 Pages) STMICROELECTRONICS

部品番号	STU7NA80

部品情報	N - CHANNEL 800V - 1.3ohm - 6.5A - Max220 FAST POWER MOSFET

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THERMAL DATA

Rthj-case

Rthj-amb

Rthc-sink

TI

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

0.86

30

0.1

300

oC/W

oC

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

6.5

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25

oC, ID = IAR, VDD = 50 V)

220

mJ

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250

µA

VGS = 0

800

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating x 0.8

Tc = 100

oC

250

1000

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS =

± 30 V

± 100

nA

ON (

∗)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold

Voltage

VDS = VGS

ID = 250

µA

2.25

3

3.75

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 3.5 A

1.3

1.5

Ω

ID(on)

On State Drain Current VDS > ID(on) x RDS(on)max

VGS = 10 V

6.5

A

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (

∗)

Forward

Transconductance

VDS > ID(on) x RDS(on)max

ID = 3.5 A

4.5

7.2

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25 V

f = 1 MHz

VGS = 0

1770

190

50

2300

250

70

pF

STU7NA80

2/5

同様の部品番号 - STU7NA80

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