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1N914 データシート(PDF) 2 Page - Vishay Siliconix |
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1N914 データシート(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com 2 Document Number 85622 Rev. 1.7, 16-Feb-07 1N914 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Package Dimensions in millimeters (inches): DO35 Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 10 mA VF 1000 mV Breakdown voltage IR = 100 µA V(BR) 100 V Peak reverse current VR = 75V IR 5µA VR = 20V, Tj = 150 °C IR 50 µA VR = 20V IR 25 nA Diode capacitance VR = 0, f = 1MHz CD 4pF Reverse recovery time IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr 4ns Figure 1. Forward Current vs. Forward Voltage 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage (V) 2.0 94 9170_1 Scattering Limit T = 25 °C j 1N914 Figure 2. Reverse Current vs. Reverse Voltage 1 10 100 1000 VR - Reverse Voltage (V) 10 1 100 94 9098 Tj = 25 °C Scattering Limit 94 9366 26 min. (1.024) 3.9 max. (0.154) 26 min. (1.024) Cathode Identification Rev. 6 - Date: 29.January 2007 Document no.: 6.560-5004.02-4 |
同様の部品番号 - 1N914 |
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同様の説明 - 1N914 |
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