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3N251 データシート(PDF) 3 Page - Vishay Siliconix |
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3N251 データシート(HTML) 3 Page - Vishay Siliconix |
3 / 4 page KBP005M thru KBP10M, 3N246 thru 3N252 Vishay General Semiconductor Document Number: 88531 Revision: 15-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Figure 3. Typical Forward Characteristics Per Diode Figure 4. Typical Reverse Leakage Characteristics Per Diode 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) T J = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0 0.01 0.1 1 10 60 80 100 20 40 Percent of Rated Peak Reverse Voltage (%) T J = 100 °C T J = 125 °C T J = 25 °C Figure 5. Typical Junction Capacitance Per Diode 1 0.1 10 100 1 10 100 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p Polarity shown on front side of case: positive lead by beveled corner 0.125 x 45° (3.2) 0.600 (15.24) 0.560 (14.22) 0.034 (0.86) 0.028 (0.76) 0.105 (2.67) 0.085 (2.16) 0.160 (4.1) 0.140 (3.6) 0.060 (1.52) 0.460 (11.68) 0.50 (12.7) MIN. 0.420 (10.67) 0.500 (12.70) 0.460 (11.68) 0.60 (15.2) MIN. DIA. 0.200 (5.08) 0.180 (4.57) Case Style KBPM |
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同様の説明 - 3N251 |
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