データシートサーチシステム |
|
STD3NK60ZD データシート(PDF) 4 Page - STMicroelectronics |
|
STD3NK60ZD データシート(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STD3NK60ZD 4/14 2 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ± 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on Static drain-source on resistance VGS = 10 V, ID = 1.2 A 3.3 3.6 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 311 43 8 pF pF pF Coss eq (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0, VDS = 0 to 400 V 27 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 2.4 A, VGS = 10 V (see Figure 16) 11.8 2.6 6.4 nC nC nC |
同様の部品番号 - STD3NK60ZD |
|
同様の説明 - STD3NK60ZD |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |