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STD5N20 データシート(PDF) 1 Page - STMicroelectronics

部品番号 STD5N20
部品情報  N-CHANNEL 200V - 0.6W - 5A DPAK MESH OVERLAY??MOSFET
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD5N20 データシート(HTML) 1 Page - STMicroelectronics

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December 2000
STD5N20
N-CHANNEL 200V - 0.6
Ω - 5A DPAK
MESH OVERLAY™ MOSFET
s
TYPICAL RDS(on) = 0.6 Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
ADD SUFFIX “T4” FOR OREDERING IN TAPE &
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STD5N20
200 V
< 0.8
5 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
200
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
200
V
VGS
Gate- source Voltage
±20
V
ID
Drain Current (continuous) at TC = 25°C
5A
ID
Drain Current (continuous) at TC = 100°C
3.5
A
IDM (l)
Drain Current (pulsed)
20
A
PTOT
Total Dissipation at TC = 25°C
45
W
Derating Factor
0.36
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
5
V/ns
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(1)ISD ≤5A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(**) Limited only by Maximum Temperature Allowed
INTERNAL SCHEMATIC DIAGRAM
1
3
TO-252
DPAK


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