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ES1B データシート(PDF) 3 Page - Vishay Siliconix |
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ES1B データシート(HTML) 3 Page - Vishay Siliconix |
3 / 4 page ES1A thru ES1D Vishay General Semiconductor www.vishay.com For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88586 Revision: 27-Aug-08 652 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Figure 3. Typical Instantaneous Forward Characteristics Figure 4. Typical Reverse Leakage Characteristics T J = 150 °C T J = 125 °C T J = 100 °C T J = 25 °C 100 10 1 0.1 0.01 Instantaneous Forward Voltage (V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 T J = 150 °C T J = 125 °C T J = 100 °C T J = 25 °C Percent of Rated Peak Reverse Voltage (%) 020 40 60 80 100 1000 100 10 1 0.1 Figure 5. Typical Junction Capacitance Figure 6. Typical Thermal Impedance Reverse Voltage (V) 14 12 10 8 6 4 2 0 0.1 1 10 100 T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p Mounted on 0.2 x 0.2" (5 x 7 mm) Copper Pad Areas 100 10 1 0.1 1 10 100 t - Pulse Duration (s) 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) Cathode Band 0 (0) DO-214AC (SMA) Mounting Pad Layout 0.074 (1.88) MAX. 0.208 (5.28) REF. 0.066 (1.68) MIN. 0.060 (1.52) MIN. |
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