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STK28N3LLH5 データシート(PDF) 1 Page - STMicroelectronics |
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STK28N3LLH5 データシート(HTML) 1 Page - STMicroelectronics |
1 / 13 page Preliminary Data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. September 2008 Rev 2 1/13 13 STK28N3LLH5 N-channel 30 V, 0.0035 Ω, 28 A, PolarPAK® STripFET™V Power MOSFET Features ■ Ultra low top and bottom junction to case thermal resistance ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ Fully encapsulated die ■ 100% matte tin finish (in compliance with the 2002/95/EC european directive) ■ High avalanche ruggedness ■ PolarPAK® is a trademark of VISHAY Application ■ Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Figure 1. Internal schematic diagram Type VDSS RDS(on) max RDS(on)*Qg STK28N3LLH5 30 V < 0.0045 Ω 68.4 nC*mΩ PolarPAK® Bottom View Top View Table 1. Device summary Order code Marking Package Packaging STK28N3LLH5 283L5 PolarPAK® Tape and reel www.st.com |
同様の部品番号 - STK28N3LLH5 |
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同様の説明 - STK28N3LLH5 |
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