データシートサーチシステム |
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STK820 データシート(PDF) 1 Page - STMicroelectronics |
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STK820 データシート(HTML) 1 Page - STMicroelectronics |
1 / 15 page February 2008 Rev 5 1/15 15 STK820 N-channel 25 V - 0.0058 Ω - 21 A - PolarPAK® STripFET™ Power MOSFET Features ■ Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% RG tested ■ Fully encapsulated die ■ 100% matte tin finish (in compliance with the 2002/95/EC european directive) ■ PolarPAK® is a trademark of VISHAY Application ■ Switching applications Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, moreover the double sides cooling package with ultra low junction to case thermal resistance allows to handle higher levels of current. Figure 1. Internal schematic diagram Type VDSS RDS(on) RDS(on)*Qg PTOT STK820 25 V <0.0073 Ω 63 nC*m Ω 5.2 W PolarPAK® Bottom view Top view Table 1. Device summary Order code Marking Package Packaging STK820 K820 PolarPAK® Tape and reel www.st.com |
同様の部品番号 - STK820_08 |
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同様の説明 - STK820_08 |
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