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IRF9Z22 データシート(PDF) 1 Page - Vishay Siliconix |
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IRF9Z22 データシート(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91350 www.vishay.com S-Pending-Rev. A, 10-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRF9Z22, SiHF9Z22 Vishay Siliconix FEATURES • P-Channel Versatility • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • Excellent Temperature Stability • Lead (Pb)-free Available DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-Channel Power MOSFET’s are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more common N-Channel Power MOSFET’s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. P-Channel Power MOSFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L =100 µH, RG = 25 Ω c. ISD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 0.063" (1.6 mm) from case. PRODUCT SUMMARY VDS (V) - 50 RDS(on) (Ω)VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single S G D P-Channel MOSFET TO-220 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 Lead (Pb)-free IRF9Z22PbF SiHF9Z22-E3 SnPb IRF9Z22 SiHF9Z22 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 50 V Gate-Source Voltage VGS ± 20 Drain-Gate Voltage (RGS = 20 KΩ)VGDR - 50 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 8.9 A TC = 100 °C - 5.6 Pulsed Drain Currenta IDM - 36 Linear Derating Factor 0.32 W/°C Inductive Current, Clamped L = 100 µH ILM - 36 A Unclamped Inductive Current (Avalanche Current) IL - 2.2 A Maximum Power Dissipation TC = 25 °C PD 40 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
同様の部品番号 - IRF9Z22 |
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同様の説明 - IRF9Z22 |
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