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IRF9Z14L データシート(PDF) 3 Page - Vishay Siliconix |
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IRF9Z14L データシート(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 91089 www.vishay.com S-Pending-Rev. A, 02-Jun-08 3 IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Uses IRF9Z14/SiHF9Z14 data and test conditions. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/µsb, c -80 160 ns Body Diode Reverse Recovery Charge Qrr -96 190 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT |
同様の部品番号 - IRF9Z14L |
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同様の説明 - IRF9Z14L |
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