IRF634NS datasheet(4/8 Pages) VISHAY

部品番号	IRF634NS

部品情報	Power MOSFET

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Document Number: 91033

4

S-Pending-Rev. A, 19-Jun-08

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

20 µs Pulse Width

V

DS = 50 V

102

10

0.1

VGS, Gate-to-Source Voltage (V)

5.0

6.0

7.0

8.0

9.0

4.0

91033_03

1

T

J = 25 °C

T

J = 175 °C

I

D = 7.9 A

V

GS = 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

TJ, Junction Temperature (°C)

91033_04

- 60 - 40- 20 0

20 40 60 80 100 120 140 160 180

3.5

1200

1000

800

600

0

200

400

110

VDS, Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS = 0 V, f = 1 MHz

C

iss = Cgs + Cgd, Cds Shorted

C

rss = Cgd

C

oss = Cds + Cgd

91033_05

102

103

QG, Total Gate Charge (nC)

20

16

12

8

0

4

0

10

40

30

20

V

DS = 50 V

V

DS = 125 V

For test circuit

see figure 13

V

DS = 200 V

91033_06

I

D = 4.8 A

同様の部品番号 - IRF634NS

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International Rectifier	IRF634NS	301Kb / 11P	Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)
International Rectifier	IRF634NSPBF	222Kb / 11P	HEXFET Power MOSFET

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