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IRLI520GPBF データシート(PDF) 2 Page - Vishay Siliconix |
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IRLI520GPBF データシート(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 90397 2 S-Pending-Rev. A, 05-Jun-08 IRLI520G, SiHLI520G Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -65 °C/W Maximum Junction-to-Case (Drain) RthJC -4.1 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = ± 10 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 25 µA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS (on) VGS = 5 V ID = 4.3 Ab - - 0.27 Ω VGS = 4 V ID = 3.6 Ab - - 0.38 Forward Transconductance gfs VDS = 50 V, ID = 4.3 Ab 3.3 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 490 - pF Output Capacitance Coss - 150 - Reverse Transfer Capacitance Crss -30 - Drain to Sink Capacitance C f = 1.0 MHz - 12 - Total Gate Charge Qg VGS = 5 V ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b -- 12 nC Gate-Source Charge Qgs -- 3.0 Gate-Drain Charge Qgd -- 7.1 Turn-On Delay Time td(on) VDD = 50 V, ID = 9.2 A, RG = 9 Ω, RD= 5.2 Ω, see fig. 10b -9.8 - ns Rise Time tr -64 - Turn-Off Delay Time td(off) -21 - Fall Time tf -27 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 7.2 A Pulsed Diode Forward Currenta ISM -- 29 Body Diode Voltage VSD TJ = 25 °C, IS = 7.2 A, VGS = 0 Vb -- 2.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µsb - 130 190 ns Body Diode Reverse Recovery Charge Qrr - 0.83 1.0 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
同様の部品番号 - IRLI520GPBF |
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同様の説明 - IRLI520GPBF |
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