データシートサーチシステム |
|
SI1035X-T1-E3 データシート(PDF) 2 Page - Vishay Siliconix |
|
SI1035X-T1-E3 データシート(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 71426 S-80643-Rev. B, 24-Mar-08 Vishay Siliconix Si1035X Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.40 V VDS = VGS, ID = - 250 µA P-Ch - 0.40 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 2.8 V N-Ch ± 0.5 ± 1.0 µA P-Ch ± 0.5 ± 1.0 VDS = 0 V, VGS = ± 4.5 V N-Ch ± 1.5 ± 3.0 P-Ch ± 1.0 ± 3.0 Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V N-Ch 1 500 nA VDS = - 16 V, VGS = 0 V P-Ch - 1 - 500 VDS = 16 V, VGS = 0 V, TJ = 85 °C N-Ch 10 µA VDS = - 16 V, VGS = 0 V, TJ = 85 °C P-Ch - 10 On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V N-Ch 250 mA VDS = - 5 V, VGS = - 4.5 V P-Ch - 200 Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 200 mA N-Ch 5 Ω VGS = - 4.5 V, ID = - 150 mA P-Ch 8 VGS = 2.5 V, ID = 175 mA N-Ch 7 VGS = - 2.5 V, ID = 125 mA P-Ch 12 VGS = 1.8 V, ID = 150 mA N-Ch 9 VGS = - 1.8 V, ID = - 100 mA P-Ch 15 VDS = 1.5 V, ID = 40 mA N-Ch 10 VDS = - 1.5 V, ID = - 30 mA P-Ch 20 Forward Transconductancea gfs VDS = 10 V, ID = 200 mA N-Ch 0.5 S VDS = - 10 V, ID = - 150 mA P-Ch 0.4 Diode Forward Voltagea VSD IS = 150 mA, VGS = 0 V N-Ch 1.2 V IS = - 150 mA, VGS = 0 V P-Ch - 1.2 Dynamicb Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 150 mA P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA N-Ch 750 pC P-Ch 1500 Gate-Source Charge Qgs N-Ch 75 P-Ch 150 Gate-Drain Charge Qgd N-Ch 225 P-Ch 450 Turn-On Time tON N-Channel VDD = 10 V, RL = 47 Ω ID ≅ 250 mA, VGEN = 4.5 V, RG = 10 Ω N-Ch 75 ns P-Ch 80 Turn-Off Time tOFF P-Channel VDD = - 10 V, RL = 65 Ω ID ≅ - 150 mA, VGEN = - 4.5 V, RG = 10 Ω N-Ch 75 P-Ch 90 |
同様の部品番号 - SI1035X-T1-E3 |
|
同様の説明 - SI1035X-T1-E3 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |