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SI3442BDV データシート(PDF) 4 Page - Vishay Siliconix |
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SI3442BDV データシート(HTML) 4 Page - Vishay Siliconix |
4 / 5 page www.vishay.com 4 Document Number: 72504 S-71947-Rev. D, 10-Sep-07 Vishay Siliconix Si3442BDV TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72504. Threshold Voltage - 0.6 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 0.3 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) Single Pulse Power 0 8 2 4 Time (s) 1 600 10 6 0.1 0.01 100 TA = 25 °C Single Pulse Safe Operating Area VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 TA = 25 °C Single Pulse 0.1 rDS(on) Limited BVDSS Limited IDM Limited 1 ms 10 ms 100 ms DC, 100 s, 10 s, 1 s 10 µs 100 µs Normalized Thermal Transient Impedance, Junction-to-Ambient 10- 3 10- 2 1 10 600 10- 1 10- 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 120 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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