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SI3457CDV-T1-E3 データシート(PDF) 1 Page - Vishay Siliconix |
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SI3457CDV-T1-E3 データシート(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si3457CDV Document Number: 68602 S-80894-Rev. A, 21-Apr-08 www.vishay.com 1 New Product P-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET APPLICATIONS • Load Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) - 30 0.074 at VGS = - 10 V - 5.1 5.1 nC 0.113 at VGS = - 4.5 V - 4.1 (4) S (3) G (1, 2, 5, 6) D TSOP-6 Top View 6 4 1 2 3 5 Ordering Information: Si3457CDV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET 3 mm 2.85 mm Marking Code AT XXX Lot Traceability and Date Code Part # Code Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 5.1 A TC = 70 °C - 4.1 TA = 25 °C - 4.1b, c TA = 70 °C - 3.3b, c Pulsed Drain Current IDM - 20 Continuous Source-Drain Diode Current TC = 25 °C IS - 2.5 TA = 25 °C - 1.67b, c Maximum Power Dissipation TC = 25 °C PD 3.0 W TC = 70 °C 2.0 TA = 25 °C 2.0b, c TA = 70 °C 1.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 55 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 34 41 RoHS COMPLIANT |
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