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SI3460BDV-T1-E3 データシート(PDF) 2 Page - Vishay Siliconix |
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SI3460BDV-T1-E3 データシート(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 74412 S-70187-Rev. A, 29-Jan-07 Vishay Siliconix Si3460BDV Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient ΔV DS /TJ ID = 250 µA 22.5 mV/°C VGS(th) Temperature Coefficient ΔV GS(th) /TJ - 2.9 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.45 1.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 ns Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 70 °C 10 On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = 4.5 V 20 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 5.1 A 0.023 0.027 Ω VGS = 2.5 V, ID = 4.7 A 0.027 0.032 VGS = 1.8 V, ID = 2.5 A 0.033 0.040 Forward Transconductancea gfs VDS = 10 V, ID = 5.1 A 22 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 860 pF Output Capacitance Coss 110 Reverse Transfer Capacitance Crss 65 Total Gate Charge Qg VDS = 10 V, VGS = 8 V, ID = 8 A 16 24 nC VDS = 10 V, VGS = 4.5 V, ID = 8 A 913.5 Gate-Source Charge Qgs 1.4 Gate-Drain Charge Qgd 1.4 Gate Resistance Rg f = 1 MHz 3.2 Ω Turn-on Delay Time td(on) VDD = 10 V, RL = 1.9 Ω ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω 715 ns Rise Time tr 60 90 Turn-Off Delay Time td(off) 25 40 Fall Time tf 610 Turn-on Delay Time td(on) VDD = 10 V, RL = 1.9 Ω ID ≅ 5.4 A, VGEN = 8 V, Rg = 1 Ω 510 Rise Time tr 15 25 Turn-Off Delay Time td(off) 25 40 Fall Time tf 510 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 8 A Pulse Diode Forward Current ISM 20 Body Diode Voltage VSD IS = 5.4 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 5.4 A, di/dt = 100 A/µs, TJ = 25 °C 20 40 ns Body Diode Reverse Recovery Charge Qrr 920 nC Reverse Recovery Fall Time ta 12 ns Reverse Recovery Rise Time tb 8 |
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同様の説明 - SI3460BDV-T1-E3 |
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