データシートサーチシステム |
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SI3590DV データシート(PDF) 7 Page - Vishay Siliconix |
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SI3590DV データシート(HTML) 7 Page - Vishay Siliconix |
7 / 9 page Document Number: 72032 S-60422-Rev. B, 20-Mar-06 www.vishay.com 7 Vishay Siliconix Si3590DV New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted Source-Drain Diode Forward Voltage Threshold Voltage 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.0 0.1 0.2 0.3 0.4 0.5 012 34 567 VGS - Gate-to-Source Voltage (V) ID = 2 A 0.01 0 1 6 8 2 4 10 30 0.1 Time (sec) Safe Operating Area, Junction-to-Case 100 1 0.1 1 10 100 0.01 10 1 ms 0.1 TC = 25 °C Single Pulse 10 ms 100 ms dc 100 µs IDM Limited ID(on) Limited rDS(on) Limited BVDSS Limited 10 s, 1 s VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified |
同様の部品番号 - SI3590DV |
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同様の説明 - SI3590DV |
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