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SI3850ADV-T1-E3 データシート(PDF) 2 Page - Vishay Siliconix

部品番号 SI3850ADV-T1-E3
部品情報  Complementary MOSFET Half-Bridge (N- and P-Channel)
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Document Number: 73789
S-60470-Rev. A, 27-Mar-06
Vishay Siliconix
Si3850ADV
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
N-Ch
0.6
1.5
V
VDS = VGS, ID = - 250 µA
P-Ch
- 0.6
- 1.5
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
N-Ch
1
µA
VDS = - 20 V, VGS = 0 V
P-Ch
- 1
VDS = 20 V, VGS = 0 V, TJ = 70 °C
N-Ch
10
VDS = - 20 V, VGS = 0 V, TJ = 70 °C
P-Ch
- 10
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 4.5 V
N-Ch
3.0
A
VDS = - 5 V, VGS = - 4.5 V
P-Ch
- 1.5
Drain-Source On-State Resistanceb
rDS(on)
VGS = 4.5 V, ID = 0.5 A
N-Ch
0.240
0.300
Ω
VGS = - 4.5 V, ID = - 0.5 A
P-Ch
0.510
0.640
VGS = 3.0 V, ID = 0.5 A
N-Ch
0.325
0.410
VGS = - 3.0 V, ID = - 0.5 A
P-Ch
0.780
0.980
Forward Transconductanceb
gfs
VDS = 10 V, ID = 1 A
N-Ch
1.8
S
VDS = - 10 V, ID = - 1 A
P-Ch
1.1
Diode Forward Voltageb
VSD
IS = 0.9 A, VGS = 0 V
N-Ch
0.87
1.2
V
IS = - 0.8 A, VGS = 0 V
P-Ch
- 1.0
- 1.3
Dynamicb
Total Gate Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 1 A
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A
N-Ch
0.95
1.4
nC
P-Ch
1.10
1.7
Gate-Source Charge
Qgs
N-Ch
0.22
P-Ch
0.28
Gate-Drain Charge
Qgd
N-Ch
0.24
P-Ch
0.26
Gate Resistance
Rg
N-Ch
3.5
5.3
Ω
P-Ch
10.5
16
Turn-On Delay Time
td(on)
N-Channel
VDD = 10 V, RL = 10 Ω
ID ≅ 0.9 A, VGEN = 4.5 V, RG = 1 Ω
P-Channel
VDD = - 10 V, RL = 10 Ω
ID ≅ - 0.9 A, VGEN = - 4.5 V, RG = 1 Ω
N-Ch
8
14
ns
P-Ch
13
20
Rise Time
tr
N-Ch
16
25
P-Ch
34
50
Turn-Off Delay Time
td(off)
N-Ch
20
30
P-Ch
18
30
Fall Time
tf
N-Ch
9
15
P-Ch
18
30
Body Diode Reverse Recovery Tme
trr
IF = 0.9 A, di/dt = 100 A/µs
N-Ch
20
30
IF = - 0.9 A, di/dt = 100 A/µs
P-Ch
25
40
Body Diode Reverse Recovery
Charge
Qrr
IF = 0.9 A, di/dt = 100 A/µs
N-Ch
9
15
nC
IF = - 0.9 A, di/dt = 100 A/µs
P-Ch
9
15


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