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SI3850ADV-T1-E3 データシート(PDF) 2 Page - Vishay Siliconix |
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SI3850ADV-T1-E3 データシート(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 73789 S-60470-Rev. A, 27-Mar-06 Vishay Siliconix Si3850ADV Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.6 1.5 V VDS = VGS, ID = - 250 µA P-Ch - 0.6 - 1.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V N-Ch 1 µA VDS = - 20 V, VGS = 0 V P-Ch - 1 VDS = 20 V, VGS = 0 V, TJ = 70 °C N-Ch 10 VDS = - 20 V, VGS = 0 V, TJ = 70 °C P-Ch - 10 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 4.5 V N-Ch 3.0 A VDS = - 5 V, VGS = - 4.5 V P-Ch - 1.5 Drain-Source On-State Resistanceb rDS(on) VGS = 4.5 V, ID = 0.5 A N-Ch 0.240 0.300 Ω VGS = - 4.5 V, ID = - 0.5 A P-Ch 0.510 0.640 VGS = 3.0 V, ID = 0.5 A N-Ch 0.325 0.410 VGS = - 3.0 V, ID = - 0.5 A P-Ch 0.780 0.980 Forward Transconductanceb gfs VDS = 10 V, ID = 1 A N-Ch 1.8 S VDS = - 10 V, ID = - 1 A P-Ch 1.1 Diode Forward Voltageb VSD IS = 0.9 A, VGS = 0 V N-Ch 0.87 1.2 V IS = - 0.8 A, VGS = 0 V P-Ch - 1.0 - 1.3 Dynamicb Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 1 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A N-Ch 0.95 1.4 nC P-Ch 1.10 1.7 Gate-Source Charge Qgs N-Ch 0.22 P-Ch 0.28 Gate-Drain Charge Qgd N-Ch 0.24 P-Ch 0.26 Gate Resistance Rg N-Ch 3.5 5.3 Ω P-Ch 10.5 16 Turn-On Delay Time td(on) N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 0.9 A, VGEN = 4.5 V, RG = 1 Ω P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 0.9 A, VGEN = - 4.5 V, RG = 1 Ω N-Ch 8 14 ns P-Ch 13 20 Rise Time tr N-Ch 16 25 P-Ch 34 50 Turn-Off Delay Time td(off) N-Ch 20 30 P-Ch 18 30 Fall Time tf N-Ch 9 15 P-Ch 18 30 Body Diode Reverse Recovery Tme trr IF = 0.9 A, di/dt = 100 A/µs N-Ch 20 30 IF = - 0.9 A, di/dt = 100 A/µs P-Ch 25 40 Body Diode Reverse Recovery Charge Qrr IF = 0.9 A, di/dt = 100 A/µs N-Ch 9 15 nC IF = - 0.9 A, di/dt = 100 A/µs P-Ch 9 15 |
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同様の説明 - SI3850ADV-T1-E3 |
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