SI5445BDC_08 datasheet(2/6 Pages) VISHAY

部品番号	SI5445BDC

部品情報	P-Channel 1.8-V (G-S) MOSFET

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Si5445BDC

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 73251

S-50133—Rev. A, 24-Jan-05

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−0.45

−1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = −8 V, VGS = 0 V

−1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = −8 V, VGS = 0 V, TJ = 85_C

−5

mA

On-State Drain Currenta

ID(on)

VDS p−5 V, VGS = −4.5 V

−20

A

VGS = −4.5 V, ID = −5.2 A

0.027

0.033

Drain-Source On-State Resistancea

rDS(on)

VGS = −2.5 V, ID = −4.5 A

0.035

0.043

W

Drain Source On State Resistance

rDS(on)

VGS = −1.8 V, ID = −1.7 A

0.050

0.060

W

Forward Transconductancea

gfs

VDS = −5 V, ID = −5.2 A

18

S

Diode Forward Voltagea

VSD

IS = −1.1 A, VGS = 0 V

−0.8

−1.2

V

Dynamicb

Total Gate Charge

Qg

14

21

Gate-Source Charge

Qgs

VDS = −4 V, VGS = −4.5 V, ID = −5.2 A

1.8

nC

Gate-Drain Charge

Qgd

3.3

Gate Resistance

Rg

f = 1 MHz

8

W

Turn-On Delay Time

td(on)

12

20

Rise Time

tr

VDD = −4 V, RL = 4 W

22

35

Turn-Off Delay Time

td(off)

VDD = −4 V, RL = 4 W

ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W

75

115

ns

Fall Time

tf

g

50

75

ns

Source-Drain Reverse Recovery Time

trr

IF = 1 1 A di/dt = 100 A/ms

75

115

Reverse Recovery Charge

Qrr

IF = −1.1 A, di/dt = 100 A/ms

40

60

nC

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 thru 2.5 V

TC = −55_C

125_C

2 V

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

1.5 V

1 V

同様の部品番号 - SI5445BDC_08

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Vishay Siliconix	SI5445BDC	93Kb / 1P	P-Channel, 1.8-V (G-S) MOSFET 14-Apr-05

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