SI5475DDC-T1-GE3 datasheet(4/7 Pages) VISHAY

部品番号	SI5475DDC-T1-GE3

部品情報	P-Channel 12-V (D-S) MOSFET

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Document Number: 68750

S-82487-Rev. B, 13-Oct-08

Vishay Siliconix

Si5475DDC

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Forward Diode Voltage vs. Temp.

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

10

VSD -Source-to-Drain Voltage (V)

1

100

TJ = 150 °C

TJ = 25 °C

0.2

0.3

0.4

0.5

0.6

0.7

0.8

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.02

0.04

0.06

0.08

0.10

0

1

234

5

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID =5.4 A

0

30

50

10

20

Time (s)

40

1

100

600

10

10-1

10-2

10-3

Safe Operating Area, Junction-to-Ambient

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

100 ms

10 s

1s

DC

Limited byRDS(on)*

BVDSS

Limited

10 ms

1ms

同様の部品番号 - SI5475DDC-T1-GE3

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI5475DC	109Kb / 4P	P-Channel 12-V (D-S) MOSFET Rev. B, 05-Aug-02
Texas Instruments	Si5475DC	1Mb / 29P	[Old version datasheet] Triple-Supply Power Management IC for Powering FPGAs and DSPs
Vishay Siliconix	SI5475DC-T1	109Kb / 4P	P-Channel 12-V (D-S) MOSFET Rev. B, 05-Aug-02

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同様の説明 - SI5475DDC-T1-GE3

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