データシートサーチシステム |
|
SI5486DU-T1-GE3 データシート(PDF) 2 Page - Vishay Siliconix |
|
SI5486DU-T1-GE3 データシート(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 73783 S-81449-Rev. B, 23-Jun-08 Vishay Siliconix Si5486DU Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 21 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 3.4 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.4 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 ns Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 40 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 7.7 A 0.012 0.015 Ω VGS = 2.5 V, ID = 7.3 A 0.014 0.017 VGS = 1.8 V, ID = 4.8 A 0.017 0.021 Forward Transconductancea gfs VDS = 10 V, ID = 7.7 A 46 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 2100 pF Output Capacitance Coss 310 Reverse Transfer Capacitance Crss 180 Total Gate Charge Qg VDS = 10 V, VGS = 8 V, ID = 9.3 A 36 54 nC VDS = 10 V, VGS = 4.5 V, ID = 9.3 A 21 32 Gate-Source Charge Qgs 3.3 Gate-Drain Charge Qgd 3.1 Gate Resistance Rg f = 1 MHz 5 Ω Turn-on Delay Time td(on) VDD = 10 V, RL = 1.1 Ω ID ≅ 9.3 A, VGEN = 4.5 V, Rg = 1 Ω 10 15 ns Rise Time tr 15 25 Turn-Off Delay Time td(off) 50 75 Fall Time tf 15 25 Turn-On Delay Time td(on) VDD = 10 V, RL = 1.1 Ω ID ≅ 9.3 A, VGEN = 10 V, Rg = 1 Ω 715 Rise Time tr 15 25 Turn-Off Delay Time td(off) 55 85 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 12 A Pulse Diode Forward Current ISM 40 Body Diode Voltage VSD IS = 9.1 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 9.3 A, dI/dt = 100 A/µs, TJ = 25 °C 30 60 ns Body Diode Reverse Recovery Charge Qrr 17 30 nC Reverse Recovery Fall Time ta 12 ns Reverse Recovery Rise Time tb 18 |
同様の部品番号 - SI5486DU-T1-GE3 |
|
同様の説明 - SI5486DU-T1-GE3 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |