SI5513CDC datasheet(5/12 Pages) VISHAY

部品番号	SI5513CDC

部品情報	N- and P-Channel 20-V (D-S) MOSFET

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メーカー	VISHAY [Vishay Siliconix]

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5 / 12 page

Document Number: 68806

S-82490-Rev. B, 13-Oct-08

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Vishay Siliconix

Si5513CDC

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

1

10

100

0.0

0.20.4

0.60.8

1.0

1.2

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

TJ = 25 °C

0.5

0.7

0.9

1.1

1.3

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.02

0.04

0.06

0.08

0.10

0246

8

10

12

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID =4.4 A

0

5

10

15

20

25

30

10-4

10-3

10-2

10-1

110

Time (s)

Safe Operating Area, Junction-to-Ambient

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

100 ms

1s,10s

DC

Limited byRDS(on)*

BVDSS Limited

1ms

100 µs

10 ms

同様の部品番号 - SI5513CDC

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