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SI5857DU-T1-GE3 データシート(PDF) 2 Page - Vishay Siliconix

部品番号 SI5857DU-T1-GE3
部品情報  P-Channel 20-V (D-S) MOSFET With Schottky Diode
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
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Document Number: 73696
S-81449-Rev. C, 23-Jun-08
Vishay Siliconix
Si5857DU
Notes:
a. Package limited.
b. Surface Mounted on FR4 Board.
c. t
≤ 5 s.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with a soldering
iron is not recommended for leadless components.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions for MOSFETS is 105 °C/W.
g. Maximum under Steady State conditions for Schottky is 110 °C/W.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET)b, f
RthJA
43
55
°C/W
Maximum Junction-to-Case (Drain) (MOSFET)
RthJC
9.5
12
Maximum Junction-to-Ambient (Schottky)b, g
RthJA
49
61
Maximum Junction-to-Case (Drain) (Schottky)
RthJC
13
16
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 20
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 19
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
2.6
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.6
- 1.5
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
ns
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
µA
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 4.5 V
- 20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 3.6 A
0.048
0.058
Ω
VGS = - 2.5 V, ID = - 1 A
0.081
0.100
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 3.6 A
10
S
Dynamicb
Input Capacitance
Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
480
pF
Output Capacitance
Coss
125
Reverse Transfer Capacitance
Crss
90
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 10 V, ID = - 5 A
11
17
nC
VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A
5.5
8.5
Gate-Source Charge
Qgs
1.2
Gate-Drain Charge
Qgd
1.8
Gate Resistance
Rg
f = 1 MHz
9
Ω
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 2.5 Ω
ID ≅ - 4 A, VGEN = - 4.5 V, Rg = 1 Ω
11
20
ns
Rise Time
tr
42
65
Turn-Off Delay Time
td(off)
33
50
Fall Time
tf
50
75
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 2.5 Ω
ID ≅ - 4 A, VGEN = - 10 V, Rg = 1 Ω
510
Rise Time
tr
15
25
Turn-Off Delay Time
td(off)
25
40
Fall Time
tf
10
20


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