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BAS16D-V-GS18 データシート(PDF) 2 Page - Vishay Siliconix |
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BAS16D-V-GS18 データシート(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number 85723 Rev. 1.2, 06-Apr-05 BAS16D-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Valid provided electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified 1) Valid provided electrodes are kept at ambient temperature Typical Characteristics (Tamb = 25 °C unless otherwise specified) Parameter Test condition Symbol Value Unit Maximum junction temperature Tj 150 °C Storage temperature TS - 65 to 1501) °C Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 1 mA VF 715 mV IF = 10 mA VF 855 mV IF = 50 mA VF 1.00 V IF = 150 mA VF 1.25 V Leakage current VR = 25 V, TJ = 150 °C IR 30 µA VR = 75 V IR 1 µA VR = 75 V, TJ = 150 °C IR 50 µA Diode capacitance VR = 0; f = 1 MHz Ctot 2pF Reverse recovery time IF = 10 mA to IR = 10 mA, IR = 1 mA, RL = 100 Ω trr 6ns Thermal resistance junction to ambient air RthJA 3751) °C/W Figure 1. Forward characteristics 18105 Figure 2. Dynamic Forward Resistance vs. Forward Current 17438 |
同様の部品番号 - BAS16D-V-GS18 |
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同様の説明 - BAS16D-V-GS18 |
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