TSHG6200

Document Number 81078

Rev. 1.6, 04-Dec-07

Vishay Semiconductors

www.vishay.com

1

94 8389

High Speed Infrared Emitting Diode, 850 nm,

GaAlAs Double Hetero

Description

TSHG6200 is an infrared, 850 nm emitting diode in

GaAlAs double hetero (DH) technology with high

radiant power and high speed, molded in a clear,

untinted, plastic package.

Features

• Peak wavelength:

λ

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:

ϕ = ± 10°

• Low forward voltage

• Suitable for high pulse current operation

• High modulation bandwidth

• Good spectral matching to Si photodetectors

• Standard package: T-1¾ (

∅ 5 mm)

• Lead (Pb)-free component in accordance with

RoHS 2002/95/EC and WEEE 2002/96/EC

Applications

• Infrared radiation source for operation with CMOS

cameras

• High speed IR data transmission

Parts Table

Absolute Maximum Ratings

e2

Part

Remarks

TSHG6200

MOQ: 4000 pcs

Parameter

Test condition

Symbol

Value

Unit

Reverse voltage

5V

Forward current

100

mA

Peak forward current

200

mA

Surge forward current

1A

Power dissipation

180

mW

Junction temperature

100

°C

Operating temperature range

- 40 to + 85

°C

Storage temperature range

- 40 to + 100

°C

Soldering temperature

t

≤ 5 s, 2 mm from case

260

°C

Thermal resistance junction/

ambient

270

K/W