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SS8P4C データシート(PDF) 1 Page - Vishay Siliconix

部品番号 SS8P4C
部品情報  High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SS8P4C データシート(HTML) 1 Page - Vishay Siliconix

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New Product
SS8P3C & SS8P4C
Vishay General Semiconductor
Document Number: 89029
Revision: 30-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Current Density Surface Mount
Dual Common-Cathode Schottky Rectifier
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power
losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Halogen-free
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94V-0 flammability
rating.
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC-Q101 qualified)
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Base P/NHM3 - halogen-free and RoHS compliant,
high reliability/automotive grade (AEC-Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker
test, HE3 and HM3 suffix meets JESD 201 class 2
whisker test
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
freewheeling
diodes,
dc-to-dc
converters and polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 4.0 A
VRRM
30 V, 40 V
IFSM
120 A
EAS
20 mJ
VF at IF = 4 A
0.42 V
TJ max.
150 °C
TO-277A (SMPC)
K
2
1
Anode 1
Anode 2
Cathode
K
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS8P3C
SS8P4C
UNIT
Device marking code
S83C
S84C
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Maximum average forward rectified current (Fig. 1)
total device
per diode
IF(AV)
8.0
4.0
A
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load per diode
IFSM
120
A
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode
EAS
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C


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