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Document Number: 93173

6

Revision: 14-May-08

SD263C..S50L Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 375 A

Fig. 16 - Frequency Characteristics

Fig. 17 - Maximum Total Energy Loss

Per Pulse Characteristics

Fig. 18 - Frequency Characteristics

Fig. 19 - Maximum Total Energy Loss

Per Pulse Characteristics

Fig. 20 - Frequency Characteristics

1E2

1E3

1E4

1E 1

1 E2

1 E3

1E 4

Pulse Basew idth (µs)

50 H z

200

10000

100

4000

d v / dt = 1000V/ u s

400

1000

2000

6000

Si nu so id al Pu l se

3000

1500

SD 263C ..S50L Se rie s

T = 55° C , V

= 1500V

C

RR M

tp

1E2

1E3

1E4

1E1

1E 2

1 E3

1 E4

1

2

Pulse Basew idth (µs)

4

10 jo ules p e r p u ls e

6

0. 5

0.3

Trap ezo id al P uls e

T = 125°C , V

= 1500V

RRM

SD 2 6 3 C ..S5 0 L Se r ie s

dv / dt = 1 0 0 0 V /µ s

d i/ d t = 300A /µ s

J

tp

1E 2

1E 3

1E 4

1E1

1 E 2

1E 3

1 E4

Pulse Basewidth ( µs)

SD 263C ..S50L Se rie s

Tr ape zo i dal Pu ls e

50 H z

100

20 0

400

1000

1500

20 0 0

4000

3000

600

dv / dt = 10 0 0V / us ,

d i/d t = 3 0 0 A /us

T = 5 5°C, V

= 15 00 V

C

RRM

tp

1E2

1E3

1E4

1E1

1E 2

1 E3

1 E4

1

2

Pulse Basew idth (µs)

4

10 jo u les p e r p u ls e

6

0. 5

0.3

T rape z oi dal Pu lse

T = 1 2 5°C , V

= 1 5 0 0 V

RRM

SD 263C ..S50L S eri es

dv / d t = 1 0 0 0 V/ µ s

di /d t = 1 0 0 A / µ s

J

tp

1E 2

1E 3

1E 4

1E1

1 E 2

1E 3

1 E4

Pulse Basew idth (µs)

SD 263C.. S50L Se rie s

Trap ezoi da l Pulse

50 H z

10 0

20 0

400

1000

1500

2000

4000

3000

60 0

T = 55°C , V

= 1500V

RRM

6000

dv / dt = 1000V/ u s,

di /d t = 100A / u s

C

tp